Nitride-based semiconductor substrate and semiconductor device
US8829651B2 · kind B2 · utility
1Cited by
4References
4Claims
0Family size
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Key dates
| Filing date | Apr 5, 2006 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Dec 15, 2028 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/02664
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A nitride-based semiconductor substrate has a diameter of 25 mm or more, a thickness of 250 micrometers or more, a n-type carrier concentration of 1.2×1018 cm−3 or more and 3×1019 cm−3 or less, and a thermal conductivity of 1.2 W/cmK or more and 3.5 W/cmK or less. Alternatively, the substrate has an electron mobility μ [cm2/Vs] of more than a value represented by loge μ=17.7−0.288 loge n and less than a value represented by loge μ=18.5−0.288 loge n, where the substrate has a n-type carrier concentration n [cm−3] that is 1.2×1018 cm−3 or more and 3×1019 cm−3 or less.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.