Structure and method for integrated synaptic element
US8829986B1 · kind B1 · utility
0Cited by
7References
24Claims
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Key dates
| Filing date | May 22, 2013 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | May 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Disclosed is a synaptic element that uses electro-migration in an interconnect structure, wherein the interconnect structure is optimized to give control of resistivity change following current flow. The synaptic element exhibits resistivity that is a function of the amount (of charge) and direction of current flow, wherein a continuously variable resistance is obtained by controlling the volume of a designed void in the interconnect structure.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.