Film thickness, refractive index, and extinction coefficient determination for film curve creation and defect sizing in real time
US8830464B2 · kind B2 · utility
2Cited by
16References
18Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 6, 2012 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Nov 16, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N21/8422
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
The present disclosure is directed to a method for inspecting a wafer, the wafer including a film deposited on a surface of the wafer. The film may have a thickness that varies over the surface of the wafer. The method includes the step of measuring the thickness, refractive index, and extinction coefficient of the film across the surface of the wafer. With this data a film curve is created in real time. The method also includes the step of determining a size of a defect on the surface based on at least the film curve.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.