David Feiler
5Patents
3h-index
6Co-inventors
46Inventor score
Filing activity: Sep 28, 1998 → Nov 6, 2012
Most-cited inventions
| Patent | Title | Area | Cited by | Status |
|---|---|---|---|---|
| US6271127A | Method for dual damascene process using electron beam and ion implantation cure methods for low dielectric constant materials | Emerging Cross-Sectional Technologies | 60 | Expired |
| US6239026A | Nitride etch stop for poisoned unlanded vias | Electricity | 6 | Expired |
| US7049246B1 | Method for selective fabrication of high capacitance density areas in a low dielectric constant material | Electricity | 3 | Expired |
| US8830464B2 | Film thickness, refractive index, and extinction coefficient determination for film curve creation and defect sizing in real time | Physics | 2 | Active |
| US7109125B1 | Selective fabrication of high capacitance density areas in a low dielectric constant material | Electricity | 0 | Expired |
Source: USPTO / EPO open patent data. Inventor disambiguation is heuristic; counts are objective bibliographic measures.