Magnetic memory including memory cells incorporating data recording layer with perpendicular magnetic anisotropy film
US8830735B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 23, 2011 |
| Grant date | Sep 9, 2014 |
| Priority date | — |
| Expiry date | Apr 2, 2032 |
Classification
- Technology area (CPC Y)Emerging Cross-Sectional Technologies
- CPC primaryY10T428/1143
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A magnetic memory includes: a magnetization fixed layer having perpendicular magnetic anisotropy, a magnetization direction of the magnetization fixed layer being fixed; an interlayer dielectric; an underlayer formed on upper faces of the magnetization fixed layer and the interlayer dielectric; and a data recording layer formed on an upper face of the underlayer and having perpendicular magnetic anisotropy. The underlayer includes: a first magnetic underlayer; and a non-magnetic underlayer formed on the first magnetic underlayer. The first magnetic underlayer is formed with such a thickness that the first magnetic underlayer does not exhibit in-plane magnetic anisotropy in a portion of the first magnetic underlayer formed on the interlayer dielectric.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.