Method and system for E-beam lithography with multi-exposure
US8835082B2 · kind B2 · utility
27Cited by
3References
20Claims
0Family size
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Key dates
| Filing date | Jul 31, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01J2237/31774
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
The present disclosure provides a method for electron-beam (e-beam) lithography patterning. The method includes forming a resist layer on a substrate; performing a first e-beam exposure process to the resist layer according to a first pattern; performing a second e-beam exposure process to the resist layer according to a second pattern, wherein the second patterned is overlapped to the first pattern on the resist layer; and developing the resist layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.