Patent · US Active

Method for fabricating a circuit

US8835101B1 · kind B1 · utility

1Cited by
0References
5Claims
0Family size

Assignee

Inventor

Key dates

Filing dateJun 7, 2011
Grant dateSep 16, 2014
Priority date
Expiry dateJun 7, 2031

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH01L21/033
  • WIPO fieldSemiconductors
  • WIPO sectorElectrical engineering

Abstract

A method for fabricating a circuit, by defining a first set of resist features on a substrate and corresponding to a first mask layout, followed by defining a second set of resist features on the substrate corresponding to a second mask layout, wherein the second set adds to the first set for rectifying an error in either mask layout. In another aspect, the method is by defining a first set of resist features on a substrate and corresponding to a first mask layout that has an error, etching the substrate while the first set protects selected regions, defining a second set of resist features on the substrate and corresponding to a second mask layout, followed by etching the substrate to selectively remove portions of the selected regions for rectifying the error.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.