Method for manufacturing semiconductor device
US8835268B2 · kind B2 · utility
28Cited by
26References
14Claims
0Family size
Assignee
Inventor
Key dates
| Filing date | Mar 15, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Mar 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/0158
Abstract
A method for manufacturing a semiconductor device includes forming a mask film on a partial region of a semiconductor substrate; forming a mask member above the semiconductor substrate in both the region where the mask film is formed and a region where the mask film is not formed; patterning the mask film and an upper portion of the semiconductor substrate by performing etching using the mask member as a mask. The method further includes removing part of the patterned upper portion of the semiconductor substrate by performing etching using the patterned mask film as a mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.