Electronic component manufacturing method including step of embedding metal film
US8835296B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 20, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2031 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention provides an electronic component manufacturing method including a step of embedding a metal film. An embodiment of the present invention includes a first step of depositing a barrier layer containing titanium nitride on an object to be processed on which a concave part is formed and a second step of filling a low-melting-point metal directly on the barrier layer under a temperature condition allowing the low-melting-point metal to flow, by a PCM sputtering method while forming a magnetic field by a magnet unit including plural magnets which are arranged at grid points of a polygonal grid so as to have different polarities between the neighboring magnets.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.