Nano-structured light-emitting devices

US8835902B2 · kind B2 · utility

Assignee

• SAMSUNG ELECTRONICS CO., LTD. · KR

Inventors

• Joo Sung KIM · Seodo-myeon, KR
• Taek Kim · Seongnam-si, KR

Key dates

• Filing date: Jun 9, 2011
• Grant date: Sep 16, 2014
• Expiry date: Sep 10, 2031

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10H20/818

Abstract

A nano-structured light-emitting device (LED) includes: a plurality of nanostructures on a first type semiconductor layer. Each of the plurality of nanostructures includes: a first type semiconductor nanocore on a portion of the first type semiconductor layer; a current spreading layer formed to cover a surface of the first type semiconductor nanocore and formed of an AlxGa1-xN(0<x<1)/GaN superlattice structure; an active layer on the current spreading layer (or on the first type semiconductor nanocore if the current spreading layer is embedded in the first type semiconductor nanocore); and a second type semiconductor layer on the active layer.