Lateral transistor on polymer

US8835978B2 · kind B2 · utility

Assignee

• Infineon Technologies AG · DE

Inventors

• Anton Mauder · Kolbermoor, DE
• Eric Graetz · Klagenfurt, AT

Key dates

• Filing date: May 14, 2012
• Grant date: Sep 16, 2014
• Expiry date: Sep 26, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D84/645

Abstract

Representative implementations of devices and techniques provide a high-voltage device on a semiconductor substrate. An insulating polymer layer is formed on an opposite surface to the high-voltage device, the insulating polymer layer having a thickness of at least twice that of the semiconductor substrate.