Method for producing semiconductor device and semiconductor device
US8836051B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 3, 2013 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jun 3, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/122
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A method for producing a semiconductor device includes a first step including forming a planar silicon layer and forming first and second pillar-shaped silicon layers; a second step including forming a gate insulating film around each of the first and second pillar-shaped silicon layers, forming a metal film and a polysilicon film around the gate insulating film, the thickness of the polysilicon film being smaller than half of a distance between the first and second pillar-shaped silicon layers, forming a third resist, and forming a gate line; and a third step including depositing a fourth resist so that a portion of the polysilicon film on an upper side wall of each of the first and second pillar-shaped silicon layers is exposed, removing the exposed portion of the polysilicon film, removing the fourth resist, and removing the metal film to form first and second gate electrodes.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.