Transistor device and manufacturing method thereof
US8836067B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jun 18, 2012 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jul 21, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/127
Abstract
A transistor device and a manufacturing method thereof are provided. The transistor device includes a substrate, a first well, a second well, a shallow trench isolation (STI), a source, a drain and a gate. The first well is disposed in the substrate. The second well is disposed in the substrate. The STI is disposed in the second well. The STI has at least one floating diffusion island. The source is disposed in the first well. The drain is disposed in the second well. The electric type of the floating diffusion island is different from or the same with that of the drain. The gate is disposed above the first well and the second well, and partially overlaps the first well and the second well.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.