Reversal lithography approach by selective deposition of nanoparticles
US8836082B2 · kind B2 · utility
5Cited by
4References
21Claims
0Family size
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Key dates
| Filing date | Jan 31, 2011 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Jan 2, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D84/00
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
A novel reversal lithography process without etch back is described. The reversal material comprises nanoparticles that are selectively deposited into the gaps between features without overcoating the tops of the features. As a result, a patterned imaging layer can be removed using solvent, blanket exposure followed by developer washing, or dry etching directly, without an etch-back process, and the original bright field lithography pattern can be reversed into dark field features, and transferred into subsequent layers using the nanoparticle reversal material as an etch mask.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.