Semiconductor device having insulating layers containing oxygen and a barrier layer containing manganese
US8836126B2 · kind B2 · utility
8Cited by
3References
3Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Aug 4, 2009 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | Feb 4, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/01025
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes an insulating layer formed over a semiconductor substrate, the insulating layer including oxygen, a first wire formed in the insulating layer, and a second wire formed in the insulating layer over the first wire and containing manganese, oxygen, and copper, the second wire having a projection portion formed in the insulating layer and extending downwardly but spaced apart from the first wire.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.