Patent · US Active

Semiconductor module with edge termination and process for its fabrication

US8836131B2 · kind B2 · utility

0Cited by

14References

11Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Peter Kanschat · Soest, DE
Indrajit Paul · Wien, AT

Key dates

Filing date	Nov 19, 2009
Grant date	Sep 16, 2014
Priority date	—
Expiry date	Oct 13, 2031

Classification

Technology area (CPC H)Electricity
CPC primaryH01L2924/3011
WIPO fieldSemiconductors
WIPO sectorElectrical engineering

Abstract

A semiconductor module is disclosed, including a substrate and at least one semiconductor component in bottom contact with the substrate. The semiconductor component including a main current branch sandwiched between the bottom and top of the semiconductor component. The side edges of a barrier layer zone coincide with the side edge portions of the semiconductor component between the top and the bottom. The space above the substrate and to the side of the semiconductor component is packed with an insulating compound at least up to the level of the top of the semiconductor component. Topping the semiconductor component and parallel thereto is a patterned or unpatterned metallization connected to a contact pad on the top of the semiconductor component.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.