Patent · US Active

Memory

US8837193B2 · kind B2 · utility

1Cited by
1References
18Claims
0Family size

Assignee

Inventors

Key dates

Filing dateMar 14, 2013
Grant dateSep 16, 2014
Priority date
Expiry dateMar 14, 2033

Classification

  • Technology area (CPC G)Physics
  • CPC primaryG11C7/18
  • WIPO fieldComputer technology
  • WIPO sectorElectrical engineering

Abstract

A memory in accordance with an embodiment of the present invention may include a first page buffer, a second page buffer arranged adjacent to the first page buffer in a first direction, a global pad arranged between the first page buffer and the second page buffer, and a first bit line selection unit arranged adjacent to the first page buffer and the second page buffer in a second direction substantially perpendicular to the first direction, wherein a first bit line pad is formed at a center of the a first bit line selection unit.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.