Patent · US Active

Differential sensing method and system for STT MRAM

US8837210B2 · kind B2 · utility

5Cited by

0References

32Claims

0Family size

Assignee

Infineon Technologies AG · DE

Inventors

Mihail Jefremow · Augsburg, DE
Wolf Allers · Munich, DE
Jan Otterstedt · Unterhaching, DE
Christian Peters · Mountain View, US
Thomas Kern · Munich, DE

Key dates

Filing date	Aug 23, 2012
Grant date	Sep 16, 2014
Priority date	—
Expiry date	Aug 23, 2032

Classification

Technology area (CPC G)Physics
CPC primaryG11C2029/5006
WIPO fieldComputer technology
WIPO sectorElectrical engineering

Abstract

The invention relates to methods and systems for reading a memory cell and in particular, an STT MRAM. In accordance with one aspect of the invention, a system for reading a memory cell includes a read path and a precharge path. The reference current is provided through the read path and is sampled via a sampling element in the read path. Subsequently, a current from the memory cell is provided through the same sampling element and read path. The output level is then determined by the cell current working against the sampled reference current.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.