Dielectric reliability assessment for advanced semiconductors
US8839180B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | May 22, 2013 |
| Grant date | Sep 16, 2014 |
| Priority date | — |
| Expiry date | May 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L22/34
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments relate to methods, computer systems and computer program products for performing a dielectric reliability assessment for an advanced semiconductor. Embodiments include receiving data associated with a test of a macro of the advanced semiconductor to a point of dielectric breakdown. Embodiments also include scaling the data for the macro down to a reference area and extracting a parameter for a Weibull distribution from the scaled down data for the reference area. Embodiments further include deriving a cluster factor (α) from the scaled down data for the reference area and projecting a failure rate for a larger area of the advanced semiconductor based on the extracted parameter, the cluster factor and the recorded data associated with the dielectric breakdown of the macro.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.