Method of producing a hybrid substrate by partial recrystallization of a mixed layer
US8841202B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 12, 2010 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Mar 1, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method of producing a hybrid substrate includes preparing a monocrystalline first substrate to obtain two surface portions. A temporary substrate is prepared including a mixed layer along which extends one surface portion and is formed of first areas and adjacent different second areas of amorphous material, the second areas forming at least part of the free surface of the first substrate. The first substrate is bonded to the other surface portion with the same crystal orientation as the first surface portion, by molecular bonding over at least the amorphous areas. A solid phase recrystallization of at least part of the amorphous areas according to the crystal orientation of the first substrate is selectively carried and the two surface portions are separated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.