Lithography processes utilizing extreme ultraviolet rays and methods of manufacturing semiconductor devices using the same
US8841219B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Sep 14, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 7, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/70433
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
Lithography processes are provided. The lithography process includes installing a reticle masking (REMA) part having a REMA open region in a lithography apparatus, loading a reticle including at least one reticle chip region in which circuit patterns are disposed into the lithography apparatus, and sequentially exposing a first wafer field, which includes a first chip region corresponding to the reticle chip region, and a second wafer field, which includes a second chip region corresponding to the reticle chip region, of a wafer to rays using the reticle and the REMA part to transfer images of the circuit patterns onto the wafer. An edge boundary of the REMA open region transferred on the first wafer field is located on a scribe lane region between the first and second chip regions while the first wafer field is exposed. Methods of manufacturing a semiconductor device using the lithography process are also provided.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.