Semiconductor storage device and method for manufacturing same
US8841646B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 6, 2013 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Oct 6, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/8828
Abstract
Disclosed are a semiconductor storage device and a manufacturing method. The storage device has: a substrate; a first word line above the substrate; a first laminated body above the first word line and having N+1 first inter-gate insulating layers and N first semiconductor layers alternately laminated; a first bit line above the laminated body and extending in a direction that intersects the first word line; a first gate insulating layer on side surfaces of the first inter-gate insulating layers and the first semiconductor layers; a first channel layer on the side surface of the first gate insulating layer; and a first variable resistance material layer on the side surface of the first channel layer. The first variable resistance material layer is in a region where the first word line and the first bit line intersect. A polysilicon diode is used as a selection element.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.