Semiconductor device
US8841664B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 24, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Feb 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/6758
Abstract
Provided is a highly reliable semiconductor device by giving stable electric characteristics to a transistor in which a semiconductor film whose threshold voltage is difficult to control is used as an active layer. By using a silicon oxide film having a negative fixed charge as a film in contact with the active layer of the transistor or a film in the vicinity of the active layer, a negative electric field is always applied to the active layer due to the negative fixed charge and the threshold voltage of the transistor can be shifted in the positive direction. Thus, the highly reliable semiconductor device can be manufactured by giving stable electric characteristics to the transistor.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.