Semiconductor device having seal wiring
US8841753B2 · kind B2 · utility
3Cited by
4References
25Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Mar 23, 2012 |
| Grant date | Sep 23, 2014 |
| Priority date | — |
| Expiry date | Apr 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/0002
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device includes: an interlayer insulating film formed on a substrate; a wiring formed in the interlayer insulating film in a chip region of the substrate; a seal ring formed in the interlayer insulating film in a periphery of the chip region and continuously surrounding the chip region; and a first protective film formed on the interlayer insulating film having the wiring and the seal ring formed therein. A first opening is formed in the first protective film in a region located outside the seal ring when viewed from the chip region, and the interlayer insulating film is exposed in the first opening.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.