Photolithography method including dual development process
US8846305B2 · kind B2 · utility
4Cited by
2References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jun 29, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Aug 5, 2032 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG03F7/40
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A photolithography method includes coating a photoresist on an active region and an edge region of a wafer, exposing the photoresist on the edge region to first ultraviolet rays, exposing the photoresist on the active region to second ultraviolet rays, depositing a first developing solution on the photoresist on the edge region to remove the photoresist on the edge region, and developing the photoresist on the active region using a second developing solution.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.