Silicon layer for stopping dislocation propagation
US8846461B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 28, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 28, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/0212
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A composite semiconductor structure and method of forming the same are provided. The composite semiconductor structure includes a first silicon-containing compound layer comprising an element selected from the group consisting essentially of germanium and carbon; a silicon layer on the first silicon-containing compound layer, wherein the silicon layer comprises substantially pure silicon; and a second silicon-containing compound layer comprising the element on the silicon layer. The first and the second silicon-containing compound layers have substantially lower silicon concentrations than the silicon layer. The composite semiconductor structure may be formed as source/drain regions of metal-oxide-semiconductor (MOS) devices.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.