ReRAM stacks preparation by using single ALD or PVD chamber
US8846484B2 · kind B2 · utility
Assignees
Inventors
Key dates
| Filing date | Feb 15, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Feb 15, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10B63/80
Abstract
Systems and methods for preparing resistive switching memory devices such as resistive random access memory (ReRAM) devices wherein both oxide and nitride layers are deposited in a single chamber are provided. Various oxide and nitride based layers in the ReRAM device such as the switching layer, current-limiting layer, and the top electrode (and optionally the bottom electrode) are deposited in the single chamber. By fabricating the ReRAM device in a single chamber, throughput is increased and cost is decreased. Moreover, processing in a single chamber reduces device exposure to air and to particulates, thereby minimizing device defects.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.