Methods for producing silicon on insulator structures having high resistivity regions in the handle wafer
US8846493B2 · kind B2 · utility
63Cited by
15References
35Claims
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Key dates
| Filing date | Mar 13, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jul 19, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/76254
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Silicon on insulator structures having a high resistivity region in the handle wafer of the silicon on insulator structure are disclosed. Methods for producing such silicon on insulator structures are also provided. Exemplary methods involve creating a non-uniform thermal donor profile and/or modifying the dopant profile of the handle wafer to create a new resistivity profile in the handle wafer. Methods may involve one or more SOI manufacturing steps or electronic device (e.g., RF device) manufacturing steps.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.