Method for equipping an epitaxy reactor
US8846501B2 · kind B2 · utility
Assignee
Inventor
Key dates
| Filing date | Jun 8, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jun 8, 2030 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC30B35/00
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
The invention relates to a method for equipping a process chamber in an apparatus for depositing at least one layer on a substrate held by a susceptor in the process chamber, process gases being introduced into the process chamber through a gas inlet element, in particular by means of a carrier gas, the process gases decomposing into decomposition products in the chamber, in particular on hot surfaces, the decomposition products comprising the components that form the layer. In order to improve the apparatus so that thick multi-layer structures can be deposited reproducibly in process steps that follow one another directly, it is proposed that a material is selected for the surface facing the process chamber at least of the wall of the process chamber that is opposite the susceptor, the optical reflectivity, optical absorptivity and optical transmissivity of which respectively correspond to those of the layer to be deposited during the layer growth.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.