Enhanced electron mobility at the interface between Gd2O3(100)/N-Si(100)
US8846506B2 · kind B2 · utility
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14Claims
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Key dates
| Filing date | Apr 22, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Apr 22, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D64/647
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A multilayered structure is provided. The multilayered structure may include a silicon substrate and a film of gadolinium oxide disposed on the silicon substrate. The top surface of the silicon substrate may have silicon orientated in the 100 direction (Si(100)) and the gadolinium oxide disposed thereon may have an orientation in the 100 direction (Gd2O3(100)).
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.