Interconnections for fine pitch semiconductor devices and manufacturing method thereof
US8846519B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | May 9, 2012 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | May 9, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2924/384
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A semiconductor device and a manufacturing method thereof are provided. The semiconductor device has an active surface. The semiconductor device includes at least a connecting element and at least a bump. The connecting element is disposed on the activate surface and has a minimum dimension smaller than 100 microns. The bump is disposed on the connecting element and is electrically connected to the active surface by the connecting element. The bump includes a pillar part disposed on the connecting element and a top part disposed on the top of the pillar part. The pillar part has a first dimension and a second dimension both parallel to the active surface. The first dimension is more than 1.2 times the second dimension. The top part is composed of solder and will melt under a pre-determined temperature. The pillar part will not melt under the pre-determined temperature.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.