Materials and methods of forming controlled void
US8846522B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Feb 14, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Feb 14, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L2221/1047
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
The present invention is a process for forming an air gap within a substrate, the process comprising: providing a substrate; depositing a sacrificial material by deposition of at least one sacrificial material precursor; depositing a composite layer; removal of the porogen material in the composite layer to form a porous layer and contacting the layered substrate with a removal media to substantially remove the sacrificial material and provide the air gaps within the substrate; wherein the at least one sacrificial material precursor is selected from the group consisting of: an organic porogen; silicon, and a polar solvent soluble metal oxide and mixtures thereof.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.