Integrated plasmonic nanocavity sensing device
US8848194B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 6, 2011 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | May 8, 2031 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG01N2021/7789
- WIPO fieldMeasurement
- WIPO sectorInstruments
Abstract
An integrated plasmonic sensing device is described wherein the integrated device comprises: at least one optical source comprising a first conductive layer and a second conductive layer, and a optical active layer between at least part of said first and second conductive layers; at least one nanocavity extending through said first and second conductive layers and said optical active layer, wherein said optical source is configured to generate surface plasmon modes suitable for optically activating one or more resonances in said nanocavity; and, at least one optical detector comprising at least one detection region formed in said substrate in the vicinity of said nanocavity resonator, wherein said optical detector is configured to sense optically activated resonances in said nanocavity.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.