Step soft program for reversible resistivity-switching elements
US8848430B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Nov 18, 2010 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Jul 31, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11C2213/32
- WIPO fieldComputer technology
- WIPO sectorElectrical engineering
Abstract
A method and system for forming, resetting, or setting memory cells is disclosed. One or more programming conditions to apply to a memory cell having a reversible resistivity-switching element may be determined based on its resistance. The determination of one or more programming conditions may also be based on a pre-determined algorithm that may be based on properties of the memory cell. The one or more programming conditions may include a programming voltage and a current limit. For example, the magnitude of the programming voltage may be based on the resistance. As another example, the width of a programming voltage pulse may be based on the resistance. In some embodiments, a current limit used during programming is determined based on the memory cell resistance.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.