Plasmon generator self-annealing with current injection in TAMR
US8848495B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 2, 2013 |
| Grant date | Sep 30, 2014 |
| Priority date | — |
| Expiry date | Dec 2, 2033 |
Classification
- Technology area (CPC G)Physics
- CPC primaryG11B2005/0021
- WIPO fieldAudio-visual technology
- WIPO sectorElectrical engineering
Abstract
A dual plasmon generator (PG) mirror image structure is used during fabrication of a TAMR head to locally anneal the PGs without substantially elevating the temperature in adjacent layers. Two PGs have narrow peg portions aligned head to head, and larger back end portions with a back side facing away from the eventual ABS. A first lead is attached to a back side of a first PG while a second lead is connected to a back side of a second PG. A 10 mA current is injected into a first PG and exits from the second PG and causes resistive heating in the rod-like portions where the temperature may be raised by 250° C. or more. A temporary overcoat layer may be formed over the PGs to dissipate heat and to keep the PGs from deforming during the annealing step.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.