Substrate processing apparatus and method of manufacturing semiconductor device
US8851886B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2009 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | May 7, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67098
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Provided is a substrate processing apparatus. The substrate processing apparatus includes a reaction tube; a heating device configured to heat the reaction tube; and a manifold installed outward as compared with the heating device and made of a non-metallic material. A first thickness of the manifold defined in a direction perpendicular to a center axis of the reaction tube is greater than a second thickness of the manifold defined at a position adjacent to the reaction tube in a direction parallel to the center axis of the reaction tube. The manifold includes a protrusion part of which at least a portion protrudes inward more than an inner wall of the reaction tube, and a gas supply unit disposed at at least the protrusion part for supplying gas to an inside of the reaction tube.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.