Plasma etching apparatus and method
US8852385B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Oct 4, 2007 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Nov 28, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/30655
- WIPO fieldElectrical machinery, apparatus, energy
- WIPO sectorElectrical engineering
Abstract
An upper electrode and a lower electrode are disposed opposite to each other in a process container configured to be vacuum-exhausted. The upper electrode is connected to a first RF power supply configured to apply a first RF power for plasma generation. The lower electrode is connected to a second RF power supply configured to apply a second RF power for ion attraction. The second RF power supply is provided with a controller preset to control the second RF power supply to operate in a power modulation mode that executes power modulation in predetermined cycles between a first power set to deposit polymers on a predetermined film on a wafer and a second power set to promote etching of the predetermined film on the wafer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.