Apparatus and methods for silicon oxide CVD resist planarization
US8852962B2 · kind B2 · utility
2Cited by
35References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Oct 24, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Oct 24, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/67736
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
Embodiments of the present invention provide methods and apparatus for forming a patterned magnetic layer for use in magnetic media. According to embodiments of the present application, a silicon oxide layer formed by low temperature chemical vapor deposition is used to form a pattern in a hard mask layer, and the patterned hard mask is used to form a patterned magnetic layer by plasma ion implantation.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.