Technique for forming a MEMS device
US8852984B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Mar 30, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Mar 30, 2031 |
Classification
- Technology area (CPC B)Performing Operations; Transporting
- CPC primaryB81C2203/0735
- WIPO fieldMicro-structural and nano-technology
- WIPO sectorChemistry
Abstract
In at least one embodiment of the invention, a method of manufacturing an integrated circuit including a microelectromechanical system (MEMS) device includes forming a first structural layer above at least one semiconductor device formed on a substrate. The method includes forming a second structural layer above the first structural layer. The second structural layer has a thickness substantially greater than a thickness of the first structural layer. The MEMS device comprises at least one portion of at least one of the first and second structural layers. In at least one embodiment of the invention, the method is carried out at one or more temperatures less than a tolerable threshold temperature for the at least one semiconductor device.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.