Using TiON as electrodes and switching layers in ReRAM devices
US8853046B2 · kind B2 · utility
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11Claims
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Key dates
| Filing date | Feb 16, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Jun 23, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10N70/883
Abstract
A single TiON film is used to form a ReRAM device by varying the oxygen and nitrogen content throughout the device to form the electrodes and switching layer. A ReRAM device that can be formed in a single deposition chamber is also disclosed. The ReRAM device can be formed by forming a first titanium nitride layer, forming a titanium oxynitride-titanium oxide-titanium oxynitride layer, and then forming a second titanium nitride.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.