Method of manufacturing a semiconductor device
US8853052B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Aug 5, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Sep 27, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31055
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for fabricating a semiconductor device is disclosed. An exemplary method includes a providing substrate. A dielectric layer is formed over the semiconductor substrate and a stop layer is formed over the dielectric layer. The stop layer and the dielectric layer comprise a different material. The method further includes forming a patterned hard mask layer over the stop layer and etching the semiconductor substrate through the patterned hard mask layer to form a plurality of trenches. The method also includes depositing an isolation material on the semiconductor substrate and substantially filling the plurality of trenches. Thereafter, performing a CMP process on the semiconductor substrate, wherein the CMP process stops on the stop layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.