Epitaxial process
US8853060B1 · kind B1 · utility
21Cited by
79References
19Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | May 27, 2013 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Jun 20, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/822
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
An epitaxial process includes the following step. A recess is formed in a substrate. A seeding layer is formed to cover a surface of the recess. A buffer layer is formed on the seeding layer. An etching process is performed on the buffer layer to homogenize and shape the buffer layer. An epitaxial layer is formed on the homogenized flat bottom shape buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.