Method of depositing material
US8853078B2 · kind B2 · utility
5Cited by
5References
26Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Jan 30, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Jan 30, 2031 |
Classification
- Technology area (CPC C)Chemistry; Metallurgy
- CPC primaryC23C16/52
- WIPO fieldSurface technology, coating
- WIPO sectorChemistry
Abstract
Material is deposited in a desired pattern by spontaneous deposition of precursor gas at regions of a surface that are prepared using a beam to provide conditions to support the initiation of the spontaneous reaction. Once the reaction is initiated, it continues in the absence of the beam at the regions of the surface at which the reaction was initiated.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.