Polishing liquid for CMP and polishing method using the same
US8853082B2 · kind B2 · utility
Assignee
Inventors
Key dates
| Filing date | Dec 24, 2010 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Dec 24, 2030 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/31053
- WIPO fieldBasic materials chemistry
- WIPO sectorChemistry
Abstract
An object of the present invention is to provide a polishing liquid for CMP with which polishing scratches can be reduced and a sufficiently high polishing rate can be obtained in a CMP step for an ILD film, aggregation of an abrasive grain is difficult to occur, and high flatness is obtained, and provide a polishing method using the same. The polishing liquid for CMP according to the present invention is a polishing liquid for CMP containing an abrasive grain, an additive, and water, wherein the abrasive grain comprises a cerium-based particle, and the additive comprises a 4-pyrone-based compound and at least one of a nonionic surfactant or a cationic surfactant:[wherein X11, X12, and X13 each independently represent a hydrogen atom or a monovalent substituent].
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.