Grapho-epitaxy DSA process with dimension control of template pattern
US8853085B1 · kind B1 · utility
Assignee
Inventors
Key dates
| Filing date | Apr 23, 2013 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Apr 23, 2033 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH01L21/3081
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A method for defining a template for directed self-assembly (DSA) materials includes patterning a resist on a stack including an ARC and a mask formed over a hydrophilic layer. A pattern is formed by etching the ARC and the mask to form template lines which are trimmed to less than a minimum feature size (L). Hydrophobic spacers are formed on the template lines and include a fractional width of L. A neutral brush layer is grafted to the hydrophilic layer. A DSA material is deposited between the spacers and annealed to form material domains in a form of alternating lines of a first and a second material wherein the first material in contact with the spacers includes a width less than a width of the lines. A metal is added to the domains forming an etch resistant second material. The first material and the spacers are removed to form a DSA template pattern.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.