Patent · US Active

Manufacturing method of circuit structure

US8853102B2 · kind B2 · utility

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0References
7Claims
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Key dates

Filing dateAug 7, 2013
Grant dateOct 7, 2014
Priority date
Expiry dateAug 7, 2033

Classification

  • Technology area (CPC H)Electricity
  • CPC primaryH05K2201/0338
  • WIPO fieldAudio-visual technology
  • WIPO sectorElectrical engineering

Abstract

A manufacturing method of a circuit structure is provided. A metal layer having an upper surface is provided. A surface passivation layer is formed on the metal layer. The surface passivation layer exposes a portion of the upper surface of the metal layer, and a material of the metal layer is different from a material of the surface passivation layer. The metal layer and the surface passivation layer are dipped into a modifier, and the modifier is selectively absorbed and attached to the surface passivation layer, so as to form a covering layer. The covering layer has a plurality of nanoparticles and covers the surface passivation layer.

Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.