Limiting strain relaxation in III-nitride hetero-structures by substrate and epitaxial layer patterning
US8853669B2 · kind B2 · utility
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26Claims
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Key dates
| Filing date | Oct 26, 2011 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Aug 18, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D62/8503
- WIPO fieldOptics
- WIPO sectorInstruments
Abstract
A method of fabricating a substrate for a semipolar III-nitride device, comprising patterning and forming one or more mesas on a surface of a semipolar III-nitride substrate or epilayer, thereby forming a patterned surface of the semipolar III-nitride substrate or epilayer including each of the mesas with a dimension l along a direction of a threading dislocation glide, wherein the threading dislocation glide results from a III-nitride layer deposited heteroepitaxially and coherently on a non-patterned surface of the substrate or epilayer.
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