Tunneling field effect transistor structure and method for forming the same

US8853674B2 · kind B2 · utility

Assignee

• TSINGHUA UNIVERSITY · CN

Inventors

• Ning Cui · Beijing, CN
• Renrong Liang · Beijing, CN
• Jing Wang · Longbeilingcun, CN
• Jun Xu · Nanjing, CN

Key dates

• Filing date: Aug 28, 2012
• Grant date: Oct 7, 2014
• Expiry date: Aug 28, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D12/211

Abstract

A tunneling field effect transistor structure and a method for forming the same are provided. The tunneling field effect transistor structure comprises: a substrate; a plurality of convex structures formed on the substrate, every two adjacent convex structures being separated by a predetermined cavity less than 30 nm in width, the convex structures comprising a plurality of sets, and each set comprising more than two convex structures; a plurality of floated films formed on tops of the convex structures, each floated film corresponding to one set of convex structures, a region of each floated film corresponding to a top of an intermediate convex structure in each set being formed as a channel region, and regions of the each floated film at both sides of the channel region are formed as a source region and a drain region with opposite conductivity types respectively; and a gate stack formed on each channel region.