Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layer
US8853743B2 · kind B2 · utility
0Cited by
9References
20Claims
0Family size
Assignee
Inventors
Key dates
| Filing date | Nov 16, 2012 |
| Grant date | Oct 7, 2014 |
| Priority date | — |
| Expiry date | Dec 5, 2032 |
Classification
- Technology area (CPC H)Electricity
- CPC primaryH10D30/4738
- WIPO fieldSemiconductors
- WIPO sectorElectrical engineering
Abstract
A pseudomorphic high electron mobility transistor (PHEMT) comprises a substrate comprising a Group III-V semiconductor material, a buffer layer disposed over the substrate, wherein the buffer layer comprises microprecipitates of a Group V semiconductor element and is doped with an N-type dopant, and a channel layer disposed over the buffer layer.
Source: USPTO / EPO open patent data. Objective bibliographic and citation counts.