Semiconductor device with drain-end drift diminution

US8853780B2 · kind B2 · utility

Assignee

• Freeescale Semiconductor, Inc. · US

Inventors

• Hongning Yang · Chandler, US
• Daniel J. Blomberg · Chandler, US
• Xu Cheng · Woodlawn, US
• Xin Lin · Phoenix, US
• Won Gi Min · Chandler, US
• Zhihong Zhang · Chandler, US
• Jiang-Kai Zuo · Chandler, US

Key dates

• Filing date: May 7, 2012
• Grant date: Oct 7, 2014
• Expiry date: May 7, 2032

Classification

• Technology area (CPC H): Electricity
• CPC primary: H10D62/116

Abstract

A device includes a semiconductor substrate, source and drain regions in the semiconductor substrate, a channel region in the semiconductor substrate between the source and drain regions through which charge carriers flow during operation from the source region to the drain region, and a drift region in the semiconductor substrate, on which the drain region is disposed, and through which the charge carriers drift under an electric field arising from application of a bias voltage between the source and drain regions. A PN junction along the drift region includes a first section at the drain region and a second section not at the drain region. The drift region has a lateral profile that varies such that the first section of the PN junction is shallower than the second section of the PN junction.